| PART |
Description |
Maker |
| APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| BAS125-06W BAS125-05W BAS125-04W BAS125W |
Schottky Diodes - RF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| 10-FZ06NBA084FP-M306L48 |
ultrafast IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS215AE |
SiC Schottky Barrier Diode
|
Rohm
|
