| PART |
Description |
Maker |
| SCS106AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| MA2J728 MA728 |
Schottky Barrier Diodes (SBD)
Silicon Epitaxial Planar Type Schottky Barrier Diodes
From old datasheet system
|
Matsshita / Panasonic
Mitsubishi
|
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| RJS6005TDPPEJ |
SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| SCS302AP |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS220AJTLL |
SiC Schottky Barrier Diode
|
ROHM
|
| SCS220KGHR |
SiC Schottky Barrier Diode
|
Rohm
|
