| PART |
Description |
Maker |
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| BD17810STU FAIRCHILDSEMICONDUCTORCORP-BD17616 |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| KSE170STU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD434STU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 4 A, 22 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BDX47 BDX46-16 |
Trans Darlington PNP 80V 1A 3-Pin TO-126
Trans Darlington NPN 45V 1A 3-Pin TO-126
|
New Jersey Semiconductor
|
| 2SA1775N 2SA1775Q 2SA1775P 2SD1189FP 2SD1189FQ 2SD |
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | TO-126
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | TO-126
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251VAR
150mA, SOT23, Low-Dropout Linear Regulators with Internal Microprocessor Reset Circuit
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 32V的五（巴西）总裁|甲一（c）|26
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-126 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 700mA的一（c）|26
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 80V的五（巴西）总裁| 700mA的一（c）|26
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 晶体管|晶体管|叩| 300V五（巴西）总裁| 100mA的一（c）|26
|
Rohm Co., Ltd.
New Japan Radio Co., Ltd.
|
| 2SD668 2SD668AC 2SD668D 2SD668AB |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管|叩| 160V五（巴西）总裁| 50mA的一c）|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|26
Silicon NPN Epitaxial Transistor
|
Vishay Intertechnology, Inc.
Renesas Technology / Hitachi Semiconductor
|
| BD140 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| MJE13003 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| 2SD669-TO126 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
