| PART |
Description |
Maker |
| 2-1437649-9 |
4PCV-XX-006 ASSEMBLY
|
Tyco Electronics
|
| 756-19-7 SD756-21-7 |
PLUG, ANG, BNC ,M39012/20-006
|
Vitesse Semiconductor Corporation
Winchester Electronics Corporation
|
| TB0502006KVP6000PF/-5R85 |
CAPACITOR, CERAMIC, 0.006 uF, CHASSIS MOUNT
|
Vishay Intertechnology, Inc.
|
| AP9412AGI |
68 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT, TO-220CFM, 3 PIN
|
Advanced Power Electronics, Corp.
|
| BUK7606-55B BUK7606-55B-15 |
N-channel TrenchMOS standard level FET 75 A, 55 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BUK6E3R4-40C |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
| 811-005 |
Series 811 Mighty Mouse High Density (HD) PCB Receptacle Connector Hole Patterns 811-005 and 811-006
|
Glenair, Inc.
|
| 2-1437659-2 2-1437659-0 |
8QCV-XX-006 ASSEMBLY
|
Tyco Electronics
|
| IPP042N03LG IPB042N03LG |
OptiMOS?? Power-Transistor
IPB042N03LG
OptiMOS? Power-Transistor
70 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Infineon Technologies AG
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| TXD2000MEAFLLDH TXD2000MBDFLLDH TXD2000MBDFLLNH TX |
N-channel 500 V, 0.070 O, 37 A MDmesh™ II Power MOSFET TO-247
N-channel 600 V - 0.85 O - 7 A - D²PAK, TO-220FP, TO-220 SuperFREDMesh™ Power MOSFET
N-channel 800V - 0.11 Ohm - 45A ISOTOP FAST DIODE SUPERFREDMESH MOSFET
N-CHANNEL 400V - 1.47 Ohm - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220/TO-220FP/D2PAK/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 500V - 0.15 Ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
N-channel 30 V, 0.004 O, 20 A, PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET
N-channel 30V - 0.015O - 9A SO-8 low gate charge STripFET™ II Power MOSFET
N-channel 30V - 0.012O - 8A - PowerFLAT™ ultra low gate charge STripFET™ Power MOSFET
N-CHANNEL 200V - 0.35 Ohm - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET
N-CHANNEL 200V 0.35 Ohm 9A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 600V - 0.40 Ohm - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH POWER MOSFET (WITH FAST DIODE)
N-channel 30V - 0.016 O - 9A SO-8 low gate charge STripFET ™ II Power MOSFET
N-channel 60 V, 0.0048 O, 22 A, PolarPAK® STripFET™ Power MOSFET
N-CHANNEL 100V - 0.23 Ohm - 2A SOT-223 STRIPFET II POWER MOSFET
N-CHANNEL 550V @ Tjmax - 0.30 Ohm - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
N-CHANNEL 500V 0.30 Ohm 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-channel 55V - 6.5m Ohm - 80A - DPAK - IPAK - D2PAK - TO-220- TO-220FP - STripFET Power MOSFET
P-channel 60 V - 0.20 O - 2.5 A - SOT-223 STripFET™ II Power MOSFET
N-channel 30 V - 0.008 O- 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET
N-CHANNEL 800V 0.65 Ohm 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-channel 30 V - 0.039 O - 6.5 A - SOT-223 STripFET™ II Power MOSFET
N-channel clamped 7.5 m" - 80 A TO-220 fully protected MESH OVERLAY" MOSFET
N-channel 600 V - 0.17 O - 17 A TO-220 - TO-220FP - D²PAK - I²PAK - TO-247 second generation MDmesh™ Power MOSFET
N-channel 600 V - 0.37 O - 10 A - TO-220 - TO-220FP- I²PAK - IPAK DPAK - D²PAK second generation MDmesh™ Power MOSFET
N-channel 600 V - 0.37 O - 10 A - FDmesh™ II Power MOSFET I²PAK, TO-220, TO-220FP, IPAK, DPAK
N-CHANNEL 700 V - 0.75 Ohm - 8.6 A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
N-channel 30 V - 0.0032 O - 25 A - SO-8 STripFET™ III Power MOSFET for DC/DC conversion
N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
20 A - 600 V - short circuit rugged IGBT
P-channel 30 V - 0.027 " - 6 A SO-8 STripFET™ Power MOSFET
N-channel 600 V, 0.17 O:, 17 A FDmesh™ II Power MOSFET D²PAK, I²PAK, TO-220FP, TO-220, TO-247
N-channel 650 V - 0.16 O - 19 A - TO-220 - TP-220FP - D²PAK - I²PAK - TO-247 second generation MDmesh™ Power MOSFET
N-CHANNEL 10A - 600V - TO-220/D2PAK - SHORT CIRCUIT RATED PowerMESH TM IGBT
N-channel 600 V, 0.1 O, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D²PAK, I²PAK
N-channel 40V - 5.4m Ohm - 80A - DPAK - TO-220 - IPAK STripFET™ Power MOSFET
N-channel 30 V, 0.0014 O, 35 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET
N-channel 30V - 0.0032O - 25A - PowerFLAT™ (6x5) STripFET™ III Power MOSFET
N-CHANNEL 500V - 1.22 Ohm - 4.4A TO-220/TO-220FP/DPAK/IPAK/I2PAK/D2PAK ZENER-PROTECTED SUPERMESH MOSFET
N-channel 200V - 0.15 Ohm - 15A - TO-220 - D2PAK MESH OVERLAY Power MOSFET
N-CHANNEL 600V - 8 Ohm - 1A DPAK/IPAK/TO-92/SOT-223 SUPERMESH MOSFET
N-channel 600 V - 1.76 O - 4 A SuperMESH™ Power MOSFET DPAK - D²PAK - IPAK - I²PAK - TO-220 - TO-220FP 模拟IC
N-CHANNEL 800V - 0.78 Ohm - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET 模拟IC
Analog IC 模拟IC
N-channel 500 V, 0.070 O, 37 A MDmesh™ II Power MOSFET TO-247 模拟IC
P-channel 60V - 0.20 O 2A SOT23-6L STripFET™ Power MOSFET 模拟IC
N-CHANNEL CLAMPED - 8m Ohm - 80A TO-220/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET 模拟IC
N-channel 100 V, 4.0 mO, 120 A STripFETm™ Power MOSFET Dm²PAK, TO-220 模拟IC
4- and 5-line Transil™ arrays for ESD protection 模拟IC
N-channel 550V @Tjmax - 0.32 O - 14 A TO-247 MDmesh™ MOSFET 模拟IC
N-channel 525 V, 1 O, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET 模拟IC
N-CHANNEL 800V - 3 Ohm - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET 模拟IC
N-channel 1500 V - 6 O - 2.5 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF 模拟IC
N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET 模拟IC
N-channel 25 V, 0.006 O, 48 A - DPAK - IPAK STripFET™ V Power MOSFET 模拟IC
N-channel 200V - 1.3 O - 4A TO-220 power MOS transitor 模拟IC
N-channel 55 V - 1.5 mO - 250 A - PowerSO-10 STripFET™ Power MOSFET 模拟IC
N-channel 650 V, 0.33 O, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D²PAK, I²PAK, TO-247 模拟IC
N-CHANNEL 60V 0.022 Ohm 38A TO-220/D2PAK STRIPFET MOSFET 模拟IC
N-CHANNEL 650V@TJMAX - 0.09 Ohm - 45A TO-247 MDMESH POWER MOSFET 模拟IC
N-channel 500 V, 0.29 O, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D²PAK - I²PAK - TO-220FP 模拟IC
N-channel 500 V, 0.29 O, 11 A, FDmesh™ II Power MOSFET (with fast diode), D²PAK, DPAK 模拟IC
N-channel 500V - 0.32 Ohm - 12A - TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 - FDmesh Power MOSFET (with fast diode) 模拟IC
N-CHANNEL 700V 1 Ohm 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET 模拟IC
N-channel 100 V - 0.115 O - 15 A - TO-220 low gate charge STripFET™ II Power MOSFET 模拟IC
N-channel 40 V, 0.004 O, 24 A, PolarPAK® STripFET™V Power MOSFET 模拟IC
N-channel 10A - 600V - TO-220FP PowerMESH™ IGBT 模拟IC
N-channel 30A - 600V TO-247 very fast PowerMESH™ IGBT 模拟IC
N-channel 600 V - 1 O - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET 模拟IC
N-channel 13A - 600V TO-220FP PowerMESH™ IGBT 模拟IC
N-CHANNEL 800V - 13 Ohm- 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH TM MOSFET 模拟IC
N-channel 55V - 0.005 O -120A D²PAK/TO-220/TO-247 STripFET™ II Power MOSFET 模拟IC
N-channel 650 V - 0.25 O - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
|
SunLED Co., Ltd.
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
Cooper Bussmann, Inc.
3M Company
Bourns, Inc.
Linx Technologies, Inc.
Solid State Devices, Inc.
Ametherm, Inc.
NXP Semiconductors N.V.
Murata Manufacturing Co., Ltd.
Spansion, Inc.
Harwin PLC
Intel, Corp.
Integrated Device Technology, Inc.
TM Technology, Inc.
Square D by Schneider Electric
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