PART |
Description |
Maker |
IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD MOSFET N-CH 500V 48A SOT-227B MOSFET N-CH 200V 180A SOT-227B MOSFET N-CH 300V 130A SOT-227B MOSFET N-CH 500V 64A SOT-227 MOSFET N-CH 70V 200A SOT-227B
|
http:// HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??) TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信 10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管) TinyFET P-Channel MOSFET Preliminary Information TinyFET⑩ P-Channel MOSFET Preliminary Information TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc. Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
|
IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
AP4501SD |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
|
IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|
IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|