| PART |
Description |
Maker |
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| B25671A5287A37509 B25671A5287A375 |
Film Capacitors - Powe Factor Correction PoleCap capacitor
|
EPCOS
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GL195A |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMBT194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BCM8220 |
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
|
BOARDCOM[Broadcom Corporation.]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| BCM8220 BCM8220_04 BCM822004 |
2.488/2.667-Gbps SONET/SDH Transceiver
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
2.488/2.667 GBPS ULTRA LOW POWER SONET/SDH TRANSCEIVER
|
ETC
BOARDCOM[Broadcom Corporation.]
|
