| PART |
Description |
Maker |
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| SBH92314Z-FSAN SBH92314G-FSAN SBH92314N-FSAN SBH92 |
WIRE CLIP FOR SCA-2700WC
MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
Components and FTTx solutions - Tx 1550nm (1490nm available) / Rx 1310nm
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
| SBH52454Z-FSAN SBH52454G-FSAN SBH52454N-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, 622 MBit/s TIA
|
INFINEON[Infineon Technologies AG]
http://
|
| SPB-9110V-T3T5G SPB-9110V-R3R5G |
1310 nm TX / 1550 nm TX / 3 Gb/s Medium Power 1-Fibre BIDI SM Dual Transmitter
|
Optoway Technology Inc
http://
|
| SFP-7321 |
155M SMF BIDI SFP Transceiver 20km T1310/R1550nm
|
Level One
|
| SBL51414N SBL51414G SBL51414Z SBL51214Z SBL52414Z |
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
|
Infineon Technologies AG
|
| ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
