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IKW40N60H3 -    High speed switching series third generation

IKW40N60H3_8864230.PDF Datasheet


 Full text search :    High speed switching series third generation
 Product Description search :    High speed switching series third generation


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High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
Aeroflex Circuit Technology
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV 128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V
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Toshiba, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
ICSI[Integrated Circuit Solution Inc]
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Winbond Electronics Corp
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