| PART |
Description |
Maker |
| B84110-A-A60 B84110-A B84110-A-A10 B84110-A-A20 B8 |
Power line filters for single-phase systems Rated voltage 250 V~, 50/60 Hz Rated current 0,5 A to 6 A
|
EPCOS[EPCOS]
|
| B84142-B8-R B84142-B12-R B84142-B16-R |
Power line filters for single-phase systems Rated voltage 250 V~, 50/60 Hz Rated current 8 A to 25 A
|
EPCOS[EPCOS]
|
| B82498-B1102- B82498-B1122- B82498-B1152- B82498-B |
INDUKTIVITAET KIT SIMID08 INDUKTIVITAET盒SIMID08
Size 0805 (EIA) and/or 2012 (IEC) Rated inductance 2,7 to 4700 nH Rated current 90 to 1000 mA
|
EPCOS AG
EPCOS[EPCOS]
|
| B82422-T3820-_ B82422-T1102-_ B82422-T1103-_ B8242 |
INDUCTOR 1210T 270UH
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,010 to 330 mH Rated current 40 to 450 mA
|
EPCOS[EPCOS]
EPCOS AG
|
| B82422-H1683-K100 B82422-H1102-K100 B82422-H1103-K |
High-current version Size 1210 (EIA) or 3225 (IEC) Rated inductance 1 to 100 mH Rated current 90 to 650 mA
|
EPCOS AG
EPCOS[EPCOS]
|
| B82432-H1224-K B82432-H1333-K B82432-H1334-K B8243 |
High-current version Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 330 mH Rated current 110 to 1100 mA
|
EPCOS[EPCOS]
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| B82442-H1332-K B82442-H1102-K B82442-H1103-K B8244 |
INDUCTOR 2220H 6.8UH 电感2220H 6.8UH
High-current version Size 2220 (EIA) or 5650 (IEC) Rated inductance 1 to 10000 mH Rated current 35 to 2500 mA
|
EPCOS AG
EPCOS[EPCOS]
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| B84111-A-K60 B84111-A-B120 B84111-A-K10 B84111-A-L |
SIFI-A for normal insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 1 A to 20 A 推出SIFI -阿正常插入额定电50损失0/60赫兹额定电流1 A0
SIFI-A for normal insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 1 A to 20 A 推出SIFI -阿正常插入额定电50损失0/60赫兹额定电流1 A20
|
EPCOS AG
|
| BUZ342 C67078-S3135-A2 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 60 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩级的dv /额定的胸苷超低电阻）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
