PART |
Description |
Maker |
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
UT6898G-S08-R UT6898G-S08-T UT6898L-S08-R UT6898L- |
N-CHANNEL ENHANCEMENT 9.4 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, SOP-8
|
Unisonic Technologies Co., Ltd.
|
SIZ704DT-T1-GE3 |
N-Channel 30-V (D-S) MOSFETs 9.4 A, 30 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix Vishay Intertechnology, Inc.
|
FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system
|
Fairchild Semiconductor, Corp.
|
CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS 430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
TD9944 TD9944TG |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs 240 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
Supertex, Inc. SUTEX[Supertex, Inc]
|
BA3506AF-DXT1 BA3420AL-DX BA3410AF-DXE1 BA5412-DX |
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18 2 CHANNEL, AUDIO PREAMPLIFIER, PZIP18 1 CHANNEL, AUDIO PREAMPLIFIER, PDSO16 2 CHANNEL, AUDIO AMPLIFIER, PSIP12 PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20 1 CHANNEL, AUDIO PREAMPLIFIER, PSIP7 5 W, 2 CHANNEL, AUDIO AMPLIFIER, PSIP12
|
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2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
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