PART |
Description |
Maker |
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
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GSI Technology
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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
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http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
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CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100 CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100 4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
AS7C33512PFS32_36A AS7C33512PFS36A-166TQIN AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100 Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits 512Kx16bit full CMOS SRAM
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HYNIX SEMICONDUCTOR INC Nel Frequency Controls,inc
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AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100 128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100 LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc. ALSC[Alliance Semiconductor Corporation]
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