| PART |
Description |
Maker |
| MB81EDS51654510 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| HX316C10FW-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| HX316C10F-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| KVR16LE11S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| MX25L51245GXDI10G MX25L51245GZ2I10G MX25L51245GMI1 |
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
|
Macronix International
|
| HN29V51211T-50 HN29V51211 |
512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
|
Hitachi Semiconductor
|
