PART |
Description |
Maker |
SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
FDD26AN06A0 |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
|
FAIRCHILD[Fairchild Semiconductor]
|
2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有 POWER TRANSISTORS(3A/60V/30W) POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
PVG613 PVG613S |
60V 1 Form A Photo Voltaic Relay in a 6-pin SMT Package 60V 1 Form A Photo Voltaic Relay in a 6-pin DIP Package HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-60V, 1.0A AC/ 2.0 A DC
|
International Rectifier
|
IRFP054V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?
|
Power MOSFET International Rectifier
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
IRFD014 |
Power MOSFET(Vdss=60V/ Rds(on)=0.20ohm/ Id=1.7A) Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A) 60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
HUFA76432S3S HUFA76432P3 HUFA76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 55A条(丁)|63AB 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
Intersil, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SB834 2SB834O 2SB834Y |
POWER TRANSISTORS(3.0A,60V,30W) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
|
MOSPEC[Mospec Semiconductor] MOSPEC SEMICONDUCTOR CORP. Mospec Semiconductor, Corp.
|