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IS42VS16100E-75BL -    2048 refresh cycles every 32 ms

IS42VS16100E-75BL_8692346.PDF Datasheet


 Full text search :    2048 refresh cycles every 32 ms
 Product Description search :    2048 refresh cycles every 32 ms


 Related Part Number
PART Description Maker
HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT H 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh 64目等内存 Mword × 8位)8亩刷 4亩刷
(HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
http://
Hitachi Semiconductor
Hitachi,Ltd.
M466F0804DT1-L 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
SAMSUNG[Samsung semiconductor]
HM5112805LTD-6 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Renesas Technology / Hitachi Semiconductor
HM51W18165TT-7 HM51W16165J-5 HM51W18165LJ-7 HM51W1 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM - Mword 16位)4亩刷 1亩刷
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM1 - Mword 16位)4亩刷 1亩刷
Hitachi,Ltd.
S43R32800-6BL Auto refresh and Self refresh
Integrated Silicon Solu...
HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY -4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J 1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
ELPIDA MEMORY INC
HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
Samsung Electronic
MT4C4001 MT4C4001J-6 MT4C4001J-7 MT4C4001J-8 MT4C4 standard or self refresh 标准或自刷新
Micron Technology, Inc.
MICRON[Micron Technology]
 
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IS42VS16100E-75BL 描述 IS42VS16100E-75BL Rectifier IS42VS16100E-75BL reference IS42VS16100E-75BL pin IS42VS16100E-75BL ic中文资料网
IS42VS16100E-75BL EEprom IS42VS16100E-75BL Speed IS42VS16100E-75BL Pass IS42VS16100E-75BL transient design IS42VS16100E-75BL Adjustable
 

 

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