| PART |
Description |
Maker |
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF640FP IRF640 |
N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF640FP IRF640 3007 |
N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET
From old datasheet system
|
STMicro
|
| IRF640N IRF640NL IRF640NS |
Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
|
IRF[International Rectifier]
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| IRFY130CM |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)
|
IRF[International Rectifier]
|
| SFF130_5 SFF130-5 |
8 AMP / 100 Volts 0.18OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| JANTX2N6756 JANTXV2N6756 |
POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.18ohm/ Id=14A)
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)
|
IRF[International Rectifier]
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
