| PART |
Description |
Maker |
| TH58BYG3S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M368L6423F M381L3223FTM M381L3223FTM-CLB3A2 M381L6 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC
|
SANKEN[Sanken electric]
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
|
| SLN04G72G2BK2MT-DCRT SLN04G72G2BK2MT-CCRT |
4096MB DDR3L ?SDRAM ECC SO-DIMM
|
List of Unclassifed Man...
|
