| PART |
Description |
Maker |
| IXFK90N60X IXFX90N60X |
Preliminary Technical Information
|
IXYS Corporation
|
| IXTP20N65X IXTA20N65X |
Preliminary Technical Information
|
IXYS Corporation
|
| IXGR120N60C2 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXTA8N65X2 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXXH60N65B4H1 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXTP160N075T IXTA160N075T |
Preliminary Technical Information TrenchMVTM Power MOSFET
|
IXYS Corporation
|
| IXTQ200N075T IXTH200N075T |
Preliminary Technical Information Trench Gate Power MOSFET
|
IXYS Corporation
|
| IXGQ90N27PB |
Preliminary Technical Information PolarTM IGBT for PDP Applications
|
IXYS Corporation
|
| AD5263BRU50-REEL7 AD5263 AD5263BRU20 AD5263BRU200 |
10 Bit, 65MSPS ADC, 1.8V, Int/Ext Ref, w/Power-Down 48-TQFP -40 to 85
Preliminary Technical Data
|
Analog Devices, Inc.
AD[Analog Devices]
|
| IXTP76N25T IXTH76N25T IXTI76N25T |
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXTQ160N10T IXTH160N10T |
Preliminary Technical Information TrenchMVTM Power MOSFET
160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
|
