| PART |
Description |
Maker |
| ADN2865ACP-RL ADN2865ACP-RL7 ADN2865ACP ADN2865 |
Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery IC w/Loop Timed SERDES
|
AD[Analog Devices]
|
| W19B160BTT7H |
2.7~3.6-volt write (program and erase) operations, Fast write operation
|
Winbond
|
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| BH6625FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| VM310R-4PO VM310-6PL VM310-6PO VM310R-6PO VM310R-6 |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
Electronic Theatre Controls, Inc.
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
