| PART |
Description |
Maker |
| CL-282S-WZ |
Mono-Color Upward-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-194S-HB8-R CL-194S-WR CL-194S-WS |
Mono-Color Upward-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-165 |
Multi-Color Upward-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-501 |
Multi-Color Upward-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-482T-WS |
Mono-Color Side-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-830S-WS |
Mono-Color Side-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-Z482S CL-Z482S-WS |
Mono-Color Side-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| CL-430F-WN CL-430F-WQ |
Mono-Color Side-Lighting Type
|
CITIZEN ELECTRONICS CO., LTD.
|
| LN11WP34 LNG101WHW |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs
TWO COLOR LIGHTING
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
