| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| UPC3227TB-E3 UPC3227TB-E3-A |
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
|
NEC
|
| BFU760F BFU760F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| SRF-1016 |
65 - 300 MHz silicon germanium IF receiver.
|
Stanford Microdevices
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFY640 BFY640B |
HiRel NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
