| PART |
Description |
Maker |
| TGHLV1K00JE TGHHV150RJE TGHLV5K00JE |
Due to their non-inductive design
|
Ohmite Mfg. Co.
|
| LPP-100-13.5 LPP-100-12 LPP-100-48 LPP-100-27 LPP- |
CHOKE,AXIAL,MOLDED RF,0.15uH, 10% INDUCTIVE TOL,1100 IDC
100W Single Output with PFC Function
CHOKE,AXIAL,MOLDED RF,0.56uH, 10% INDUCTIVE TOL,495 IDC
CHOKE,AXIAL,MOLDED RF,0.47uH, 10% INDUCTIVE TOL,590 IDC
CHOKE,AXIAL,MOLDED RF,0.39uH, 10% INDUCTIVE TOL,640 IDC
|
Astrodyne, Inc.
|
| SLE66CX320P |
Engine and 64-Bit DES accelerator(16位安全控制器(B>64-KB ROM,3K RAM, 32KB EEPROM))
|
SIEMENS AG
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IXA27IF1200HJ |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| IPT1208-SEB IPT1208-TEB IPT1208-CEB IPT1208-BEB |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| SML-LX0201USBC-TR |
THE SPECIFICATIONS MAY CHANGE AT ANY TIME WITHOUT NOTICE DUE TO NEW MATERIALS OR PRODUCT IMPROVEMENT
|
LUMEX INC.
|
| IPT12Q06-CEB IPT12Q06-BEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
