| PART |
Description |
Maker |
| TSC251G1DXXX-L12CB TSC251G1DXXX-L12CED TSC251G1DXX |
FPGA, CYCLONE III, 5K LE, 164MQFP Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:106;
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 55K 484 UBGA
IC CYCLONE III FPGA 55K 780 FBGA
IC CYCLONE III FPGA 55K 780FBGA
8-BIT MICROCONTROLLER 8位微控制
|
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
|
| D38999-24WF35PN D38999-20WD-18SN D38999-26FA98BN D |
KJA - Series III - Scoop proof, threaded coupling
MIL-DTL-38999 Series III Connectors
|
List of Unclassifed Manufacturers
ITT Industries
|
| TSC390 TSC395 TSC391 TSC392 TSC393 TSC394 TSC391AL |
FPGA, CYCLONE III, 80K LE, 780FBGA Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:429;
IC FLEX 6000 FPGA 10K 100-TQFP
IC CYCLONE III FPGA 80K 484 UBGA
Dual Interface Buffers
|
MICROSEMI[Microsemi Corporation]
|
| PCA-6178L-00C1E PCA-6178VE-00C1E PCA-6178-C PCA-61 |
Socket 370 Pentium垄莽 III/Celeron垄莽 Processor Card with VGA/FE LAN
Socket 370 Pentium庐 III/Celeron庐 Processor Card with VGA/FE LAN
Socket 370 Pentium? III/Celeron? Processor Card with VGA/FE LAN
|
Advantech Co., Ltd.
|
| CY7C603XX08 CY7C60333-LFXC CY7C60333-LFXCT CY7C603 |
enCoRe垄芒 III Low Voltage
enCoRe III Low Voltage
|
Cypress Semiconductor
|
| MBRP30035L |
30 AMP MINIATURE POWER RELAY
SWITCHMODESchottky Power Rectifier(POWERTAP III Package)
SWITCHMODE Schottky Power Rectifier(POWERTAP III Package)
|
Motorola, Inc.
|
| CY7C60323-LTXC CY7C60323-PVXC CY7C60323-LTXCT CY7C |
enCoRe III Low Voltage Wireless presenter tools
enCoRe?/a> III Low Voltage Wireless presenter tools
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B MULTIFUNCTION PERIPHERAL, QCC32
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CPC5622 CPC5622ATR CPC5622A |
LITELINK??III Phone Line Interface IC (DAA)
LITELINK㈢ III Phone Line Interface IC (DAA)
|
CLARE[Clare, Inc.]
|
| STB60NH02L04 STB60NH02LT4 STB70NFS03L06 STB70NFS03 |
N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET
10 OHM, Quad, SPST, CMOS Analog Switches
RADIATION HARD 4096 x 1 BIT STATIC RAM
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM
5.0 V PC real-time clock
N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion
N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
MAXIM
ZARLINK
|
| ICS9248-87 ICS9248YF-87 ICS9248YF-87LF AV9248F-87 |
Frequency generator and integrated buffer for Celeron and PII/III
150 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO48 0.300 INCH, SSOP-48
16-Bit Transparent D-Type Latches With 3-State Outputs 48-TSSOP -40 to 85
810E Single Chip Clock, Supports 66 - 155MHz (P)
Frequency Generator & Integrated Buffers for Celeron & PII/III⑩
Frequency Generator & Integrated Buffers for Celeron & PII/III?
|
Integrated Device Technology, Inc.
ICST[Integrated Circuit Systems]
Integrated Circuit Syst...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
