PART |
Description |
Maker |
15987-8 15987 |
HTSNK C X-FLOW. .911 LOW FLOW. THREADED HTSNK, C X-FLOW. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
15960 15960-A |
HTSNK A X-FLOW .9H LOW FLOW THREADED HTSNK, A X-FLOW, .9H LOW FLOW, THREADED
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VICOR[Vicor Corporation]
|
18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
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VICOR[Vicor Corporation]
|
18073 18073-5 |
HTSNK B X-FLOW .4H LOW FLOW THRU HOLE HTSNK, B X-FLOW, .4H LOW FLOW THRU HOLE
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VICOR[Vicor Corporation]
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
16285 16285-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact HTSNK, C LONG. .4H LOW FLOW, THREADED HTSNK C LONG. .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65 |
COMPUTER PRODUCT 256Kx36 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 Connector assemblies, Audio/RF/Video cables; DELUX AUDIO RIGHT ANGLE CABLE 256Kx36 & 512Kx18-Bit Flow Through NtRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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