PART |
Description |
Maker |
PFE500-12 PFE500F-28 |
300 to 714W AC-DC Power Module
|
List of Unclassifed Man...
|
PHA2731-140L |
Radar Pulsed Power Module, 140W, 300 μs, 10% Duty 2.7 - 3.1 GHz Radar Pulsed Power Module, 140W, 300 楼矛s, 10% Duty 2.7 - 3.1 GHz
|
M/A-COM Technology Solutions, Inc.
|
FM600TU-2A |
6-PACK High Power MOSFET Module 300 Amperes/100 Volts
|
Powerex Power Semiconductors
|
CM300DU-12H |
Dual IGBTMODU-Series Module 300 Amperes/600 Volts Dual IGBTMOD U-Series Module 300 Amperes/600 Volts Dual IGBTMOD⑩ U-Series Module 300 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
UTC-300P-M10E UTC-300P-M11E UTC-300P-M20E UTC-300P |
5M Camera Module for UTC-300 Series
|
Advantech Co., Ltd.
|
3B46 3B45 3B45-01 3B45-CUSTOM 3B45-02 3B46-02 3B46 |
Isolated Frequency Input; 0 to 25 kHz Signal Conditioning Module Isolated Frequency Input; 0 to 300 Hz Signal Conditioning Module; Package: IOS MODULE; No of Pins: 30; Temperature Range: Commercial SPECIALTY ANALOG CIRCUIT, XMA
|
AD[Analog Devices] Analog Devices, Inc.
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
IB048E096T40N3-OO IB048E096T40N1-00 IB048E096T40P1 |
5:1 Intermediate Bus Converter Module: Up to 300 W Output
|
Vicor Corporation
|
KEE225B0 |
Six-Darlington Transistor Module (8 Amperes/300 Volts)
|
Powerex Power Semicondu...
|
IB050E096T40N300 IB054E096T40N300 IB048E096T40N1-0 |
5:1 Intermediate Bus Converter Module: Up to 300 W Output
|
Vicor Corporation
|