| PART |
Description |
Maker |
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
| CGHV1F006S |
6W, DC - 18 GHz, 40V, GaN HEMT
|
Wolfspeed
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| MAGX-001220-1SB1PPR MAGX-001220-100L00 MAGX-001220 |
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGH27015F CGH27015F-TB CGH27015F-AMP |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CLF1G0060S-10 CLF1G0060-10 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
|
