PART |
Description |
Maker |
ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE NPN SILICON PLANAR TRANSISTOR
|
Continental Device India Limited
|
2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
CMBT4123 |
0.225W General Purpose NPN SMD Transistor. 30V Vceo, 0.200A Ic, 25 hFE. Complementary CMBT4125
|
Continental Device India Limited
|
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