PART |
Description |
Maker |
CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CLF1G0060S-10 CLF1G0060-10 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
|