PART |
Description |
Maker |
CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MGF0840G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|