PART |
Description |
Maker |
CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器(为512k × 3600万18 CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http:// Yuasa Battery, Inc. Integrated Circuit Technology Corp Microsemi, Corp. Sony, Corp. Sony Corporation
|
PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP BGA, ROHS-A, IND TEMP, T&R(ARM) BGA,GREEN,IND TEMP,T&R(ARM) x32 Flash EEPROM Module X32号,闪存EEPROM模块 EEPROM EEPROM
|
Infineon Technologies AG Amphenol Tuchel
|
FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101 SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
|
Integrated Silicon Solution, Inc.
|
FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET From old datasheet system P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
IBM25PPC740L-GB375A2T IBM25PPC740L-GB375A2R IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|360PIN|CERAMIC MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC 微处理器| 32位|的CMOS | BGA封装| 255PIN |陶瓷
|
Glenair, Inc. Vishay Semiconductors
|
IS61NVP51272-250B1 IS61NVP51272-250B1I IS61NVP1024 |
512K X 72 ZBT SRAM, 2.6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 1M X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 1M X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 512K X 72 ZBT SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
|
Integrated Silicon Solution, Inc.
|
MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144 8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119 128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
GS8322Z72C-225T GS8322Z72GC-225T GS8322Z18B-225IT |
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 2M X 18 ZBT SRAM, 7 ns, PBGA119
|
GSI Technology, Inc.
|
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