| PART |
Description |
Maker |
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| SFBFX86 BFX86 BFX86.MODE4 |
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| BUX50SMD |
3.5 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-276AB
Bipolar NPN Device in a Hermetically sealed
|
SEMELAB LTD
Seme LAB
|
| 2N5429.MOD 2N5429 |
Bipolar NPN Device in a Hermetically sealed TO66
7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA
|
Seme LAB
SEMELAB LTD
|
| MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA
From old datasheet system
POWER TRANSISTOR, NPN
350V Audio Transistor, PNP
350V Audio Transistor, NPN
|
ON Semiconductor
ONSEMI
|
| BC440-4 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| BSX20CSM BSX20CSM-JQR-AG4 |
500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Bipolar NPN Device in a Hermetically sealed LCC1
|
SEMELAB LTD
Seme LAB
|
| BUX14 BUX14-JQR |
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BUV11 BUV11.MOD |
20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
|
