PART |
Description |
Maker |
5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR400S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
KDR331E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
SB01-15NP SB01-15NP-E |
150V, 100mA Rectifier Shottky Barrier Diode Schottky Barrier Diode DIODE SCHOTTKY 150V 0.1A 3NP
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device]
|
KDR331V |
SCHOTTKY BARRIER TYPE DIODE SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|
CDBU0130R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|