| PART |
Description |
Maker |
| CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| TGA3504-SM TGA3504-SM-15 |
2 to 30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC694 |
GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz
|
Hittite Microwave Corporation
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| AA035P3-00 AA038N3-00 |
37-40 GHz GaAs MMIC low noise amplifier
31-35 GHz GaAs MMIC Driver Amplifier
315 GHz GaAs MMIC Driver Amplifier
|
Alpha Industries Inc
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
