| PART |
Description |
Maker |
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-B |
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| MRF9820T1 |
SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE
|
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| ATF-551M4 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
|
Agilent(Hewlett-Packard)
|
| ATF54143 ATF-54143-TR2 ATF-54143-TR1 ATF-54143-BLK |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-54143-TR2 ATF-54143-BLK ATF-54143-TR1 |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
HP[Agilent(Hewlett-Packard)]
|
| ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK ATF55143 |
Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| ATF55143 ATF-55143 ATF-55143- ATF-55143-BLK ATF-55 |
Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
HP[Agilent(Hewlett-Packard)]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 |
ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| LX5560L LX5560 |
InGaAs - E-Mode pHEMT Low Noise Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| 1N4626 1N4110 1N4620 1N4624 1N4104 1N4627 1N4099 1 |
surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZFKDSA 1.5C-5.0- 6 SO BN-GN
SPC 16/ 6-ST-10,16
GMSTB 2,5/ HC/ 3-GF-7.62
LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250μA - LOW NOISE
|
Microsemi, Corp.
Knox SemiconductorInc
KNOX[Knox Semiconductor, Inc]
KNOX[Knox Semiconductor Inc]
|
