| PART |
Description |
Maker |
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| R2005240 |
Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| R2005240P12 |
GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
|
PDI[PREMIER DEVICES, INC.]
|
| IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100 |
MegaMOSFET
Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No
Receiver IC; Package/Case:28-TSSOP; Current Rating:2.8mA; Interface Type:Serial; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount; Voltage Rating:3.3V RoHS Compliant: No
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, UART, USB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes
IC ARM920T MCU 200MHZ 272-TFBGA
1000V HiPerFET power MOSFET
|
JFETs
IXYS[IXYS Corporation]
|
| CAT1232LPGW CAT1232LPGZ CAT1232LPGZ-T13 CAT1232LPS |
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO16
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP8
5V and 3.3V Supply Voltage Monitor and Reset Circuit 5V3.3V电源电压监控和复位电
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 0.150 INCH, SOIC-8
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 GREEN, MSOP-8
Miniature, 1W Isolated Regulated DC/DC Converters 12-SOP
|
ON SEMICONDUCTOR
CATALYST[Catalyst Semiconductor]
|
| IBM13M16734JCA |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块16M x 72高速存储器阵列结构
|
IBM Microeletronics
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| MIC912BM5 MIC912YM5 MIC91207 |
200MHz Low-Power SOT23-5 Op Amp
|
Micrel Semiconductor
|
| M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
