| PART |
Description |
Maker |
| EL2257CS-T7 EL2257 EL2257CN EL2257CS EL2257CS-T13 |
Op Amp, Video, Dual 125MHz, SR=275V/s, Low Power, Low Voltage, Single Supply, Clamping, 100mA Output, with High Speed Disable and Power-Down
125MHz Single Supply, Clamping Op Amp
|
INTERSIL[Intersil Corporation]
|
| HA5025 HA5025IB HA5025IP FN3591 HA5025EVAL HA5340 |
Triple/ 125MHz Video Amplifier
High Speed/ Low Distortion/ Precision Monolithic Sample and Hold Amplifier
Quad/ 560MHz/ Low Power/ Video Operational Amplifier
Quad/ 125MHz Video Current Feedback Amplifier
Quad, 125MHz Video Current Feedback Amplifier
Quad 125MHz Video Current Feedback Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| EL2450CS EL2450CS-T7 EL2250 EL2250CN EL2250CS EL22 |
125MHz Single Supply Dual/Quad Op Amps
|
http://
INTERSIL[Intersil Corporation]
|
| EL2450CS-T7 EL2250_06 EL2250CN EL2250CS EL2250CS-T |
125MHz Single Supply Dual/Quad Op Amps
|
INTERSIL[Intersil Corporation]
|
| EL2450CS-T13 |
125MHz Single Supply Dual/Quad Op Amps 125MHz的单电源四路运算放大
|
Intersil, Corp.
|
| CF5015 CF5015AL2 CF5015AL1-2 CF5015AL2-2 |
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
|
Seiko NPC Corporation
|
| KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IBM13M16734BCC |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
| KMM53216004BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
