PART |
Description |
Maker |
BSS138BKS |
60 V, 320 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
P00518N |
Heavy-Duty Power Extension Cord, 15A, 14AWG (IEC-320-C14 to IEC-320-C13), 18-in
|
Tripp Lite. All Rights ...
|
P01406N |
Standard Laptop Power Adapter Cord, 2.5A, 18AWG (IEC-320-C14 to IEC-320-C5), 6-in
|
Tripp Lite. All Rights ...
|
PMFPB6532UP |
20 V, 3.5 A - 320 mV VF P-channel MOSFET-Schottky combination
|
NXP Semiconductors N.V.
|
FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼? Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
70287-1087 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 80 Circuits, 8.13mm (.320) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
0702871281 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 76 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
0702871280 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 74 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) SelectivePlating
|
Molex Electronics Ltd.
|
0702871291 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 96 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
71308-5434 0713085434 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 94 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
0702800489 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 56 Circuits, 8.13mm (.320) Mating Pin Length, Tin (Sn) Plating MOLEX Connector
|
Molex Electronics Ltd.
|
|