| PART |
Description |
Maker |
| PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN015-110P PSMN015-110P127 |
Trenchmos (tm) Sta
N-channel TrenchMOS SiliconMAX standard level FET
|
NXP Semiconductors N.V.
|
| PHP73N06 PHP73N06T PHP73N06T127 PHB73N06T |
TrenchMOS(tm) standard level FET
TrenchMOS (tm) standard level FET
73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Philips
NXP SEMICONDUCTORS
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| BUK752R7-30B BUK75_762R7_30B-02 BUK762R7-30B |
TrenchMOS(TM) standard level FET
TrenchMOS TM standard level FET
From old datasheet system
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
|
Philips
|
| BSH114 BSH114-215 |
N-channel enhancement mode field effect transistor
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK7607-55B-15 |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK768R1-100E-15 |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7Y12-55B |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors N.V.
|
| PHX34NQ11T |
N-channel Trenchmos (tm) standard level FET
|
Philips
|
