PART |
Description |
Maker |
PJ2N5551CT |
180V; 600mA NPN epitaxial silicon transistor
|
PROMAX-JOHNTON
|
SB80-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 8A Rectifier 180V/ 8A Rectifier
|
Sanyo Semicon Device
|
UPA804TC UPA804 UPA804TC-T1 PA804TC |
NPN Epitaxial Transisitor(NPN澶?欢?朵?绠? NPN Epitaxial Transisitor(NPN外延晶体 NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp. NEC[NEC]
|
FZT696B-15 |
180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
|
Diodes Incorporated
|
OP955 |
PIN Sili con Pho todiode
|
Optek Technology ETC OPTEK[OPTEK Technologies]
|
OP950 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies] ETC
|
AME8841REHA AME8841 AME8841AEHA AME8841BEHA AME884 |
Output voltage: 1.5V; 600mA CMOS LDO Output voltage: 3.1V; 600mA CMOS LDO Output voltage: 2.9V; 600mA CMOS LDO Circular Connector; No. of Contacts:100; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 600毫安的CMOS LDO稳压 Output voltage: 2.85V; 600mA CMOS LDO Output voltage: 3.7V; 600mA CMOS LDO
|
AME[Analog Microelectronics] AME, Inc.
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
BD165 |
(BD165 - BD169) SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS
|
ETC
|
UPA801 UPA801T UPA801TC UPA801TC-T1 PA801TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD NPN Epitaxial Transisitor(NPN外延晶体
|
NEC[NEC] NEC Corp.
|
2SC5489 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications NPN Epitaxial Planar Silicon Transistors
|
Sanyo Semicon Device
|