| PART |
Description |
Maker |
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| PE15A3261 |
Gain 22 dB typ
|
Pasternack Enterprises,...
|
| 2SC5214 |
Small Signal Transistor
High fT fT=100MHz typ. Excellent linearity of dc forward current gain.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| R2005200P12 |
GaAs Reverse, 5 - 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R0605300L1 |
Si Reverse, low current, 5 - 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| R1005250L |
Si Reverse, low current, 5 - 100MHz, 25.4dB typ. Gain @ 100MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R3005300L |
Si Reverse, low current, 5 - 300MHz, 30.0dB typ. Gain @ 300MHz, 160mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R9110 |
MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
