PART |
Description |
Maker |
PSMN9R5-100PS |
N-channel 100 V 9.6 mstandard level MOSFET in T0220
|
NXP Semiconductors
|
BUK7K8R7-40E |
Dual N-channel 40 V, 8.5 mstandard level MOSFET
|
NXP Semiconductors
|
BUK7K6R8-40E |
Dual N-channel 40 V, 6.8 mstandard level MOSFET
|
NXP Semiconductors
|
BUK7K35-60E |
Dual N-channel 60 V, 30 mstandard level MOSFET
|
NXP Semiconductors
|
PSMN4R5-40BS |
N-channel 40 V 4.5 mstandard level MOSFET in D2PAK
|
NXP Semiconductors
|
PSMN9R5-100XS |
N-channel 100V 9.6 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管(N通道增强模式逻辑层次额定雪崩 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220. N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
ADG604 ADG604YRU ADG604YRUZ-REEL7 ADG604YRU-REEL A |
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer 1 pC Charge Injection, 100 pA Leakage CMOS 卤5 V/5 V/3 V 4-Channel Multiplexer IC,ANALOG MUX,QUAD,1-CHANNEL,CMOS,TSSOP,14PIN,PLASTIC 1 PC CHARGE INJECTION, 100 PA LEAKAGE CMOS 5 V/5 V/3 V 4-CHANNEL MULTIPLEXER 1pC Charge Injection, Low Leakage CMOS 4-Channel Multiplexer
|
Analog Devices, Inc. adi
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