PART |
Description |
Maker |
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) CONNECTOR ACCESSORY Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor Toshiba Corporation
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
STS2306 |
N-Channel Enhancement Mode Field Effect Transistor N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics Corp.
|
SSM3K17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
2SK3471 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
2SK3442 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) From old datasheet system Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|