Part Number Hot Search : 
MSM51 AZ23C30 AM2956DC BC857AT1 ST081023 KTC2983L AM2956DC MCZ33889
Product Description
Full Text Search

2PG352 - Insulated Gate Bipolar Transistor

2PG352_8383895.PDF Datasheet

 
Part No. 2PG352
Description Insulated Gate Bipolar Transistor

File Size 153.29K  /  2 Page  

Maker

Panasonic



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2P4M
Maker: NEC
Pack: TO-220
Stock: 17733
Unit price for :
    50: $0.21
  100: $0.20
1000: $0.19

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ 2PG352 Datasheet PDF Downlaod from Datasheet.HK ]
[2PG352 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2PG352 ]

[ Price & Availability of 2PG352 by FindChips.com ]

 Full text search : Insulated Gate Bipolar Transistor
 Product Description search : Insulated Gate Bipolar Transistor


 Related Part Number
PART Description Maker
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
IRG4BC29K IRG4BC30K IRG4BC30 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
MGP7N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS13002D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP11N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
IRG4PSC71K-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
2PG352 control 2PG352 Rail 2PG352 ohm 2PG352 Processors 2PG352 preis
2PG352 Matsushita 2PG352 Package 2PG352 Switching 2PG352 rectifier 2PG352 Vcc
 

 

Price & Availability of 2PG352

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.2398829460144