| PART |
Description |
Maker |
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| QRS0660T30 |
Fast Recovery Diode Module (600 Amp/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| STW55NM60ND |
N-channel 600 V - 0.047 ヘ - 51 A TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| STW43NM60ND |
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode
|
STMicroelectronics
|
| STW47NM60ND |
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package
|
STMicroelectronics
|
| STB28NM60ND |
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
|
ST Microelectronics
|
| STX23NM60ND10 STW23NM60ND STF23NM60ND STB23NM60ND |
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh?/a> II Power MOSFET (with fast diode) D2PAK, I2PAK, TO-220, TO-220FP, TO-247
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh II Power MOSFET (with fast diode) D2PAK, I2PAK, TO-220, TO-220FP, TO-247
|
STMicroelectronics
|
| APT15DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 15; VR (V): 600; trr (nsec): 16; VF (V): 2; Qrr (nC): 250; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Microsemi, Corp.
|
| SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7
600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| STGF10NC60SD STGD10NC60SD |
Very soft ultra fast antiparallel diode
10 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS
|
| FMX-G26S FMX-G16S FMD-G26S |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V)
Ultra-Fast-Recovery Rectifier Diodes 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
|
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