PART |
Description |
Maker |
NANO-AP800 |
High frequency design
|
FSP TECHNOLOGY INC.
|
FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
|
TOSHIBA
|
BB833 Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz special design for use in TV-SAT indoor units) Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)
|
Siemens Group SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
BUL57A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
BUL68B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
BUL68A BUL66A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB SEME-LAB[Seme LAB]
|
BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|