PART |
Description |
Maker |
IPD180N10N3G IPD180N10N3G-14 |
N-channel, normal level
|
Infineon Technologies A...
|
IPB017N10N5 |
N-channel, normal level
|
Infineon Technologies A...
|
IPB79CN10N-G IPP80CN10N-G IPB79CN10NG IPD78CN10NG |
N-channel, normal level
|
Infineon Technologies AG Infineon Technologies A...
|
IPP023NE7N3G IPP023NE7N3G-15 |
N-channel, normal level
|
Infineon Technologies A...
|
IPD60N10S4-12 |
N-channel - Normal Level - Enhancement mode
|
Infineon Technologies A...
|
IPB065N15N3G IPB065N15N3GATMA1 |
OptiMOS3 Power-Transistor N-Channel, normal level
|
Infineon Technologies AG Infineon Technologies A...
|
IPB051NE8NG10 IPI05CNE8NG IPP054NE8NG |
OptiMOS?? Power-Transistor Features N-channel, normal level 175 掳C operating temperature OptiMOS? Power-Transistor Features N-channel, normal level 175 °C operating temperature
|
Infineon Technologies AG
|
PMGD780SN |
Dual N-channel TrenchMOS standard level FET Dual N-channel 楼矛TrenchMOS standard level FET Dual N-channel μTrenchMOS standard level FET
|
NXP Semiconductors N.V.
|
HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FDR8508P |
Dual P-Channel/ Logic Level/ PowerTrench MOSFET Dual P-Channel, Logic Level, PowerTrench⑩ MOSFET Dual P-Channel, Logic Level, PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|