| PART |
Description |
Maker |
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
| STS2DPF20V |
DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET II POWER MOSFET
2 A, 20 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFETII POWER MOSFET
DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET⑩ II POWER MOSFET
DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| 2SC2059KJM 2SC2059KJN 2SC2059KJP 2SC3082KSP 2SC308 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 晶体管|晶体管|叩| 32V的五（巴西）总裁| 600毫安一（c）| SOT - 23封装
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）| SOT - 23封装
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SOT-23
|
TT electronics Semelab, Ltd.
|
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| APT50M38JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
MOSFET P-CH 20V 4.3A 8-SOIC 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 500V 91A 0.038 Ohm
|
Advanced Power Technology, Ltd.
|
| FDMA6023PZT |
-20V Dual P-Channel PowerTrenchMOSFET
Dual P-Channel PowerTrench垄莽 MOSFET -20 V, -3.6 A, 60 m楼?
Dual P-Channel PowerTrench? MOSFET -20 V, -3.6 A, 60 mΩ
|
Fairchild Semiconductor
|
| 2SK1133 2SK1133-T1B 2SK1133-L 2SK1133-T2B |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
From old datasheet system
|
NEC Electron Devices
NEC[NEC]
|
| SI6953DQ |
Dual 20V P-Channel PowerTrench MOSFET
Dual 20V P-Channel PowerTrench MOSFET 1.9 A, 20 V, 0.17 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BF994ST/R |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 30mA的一（d）|的SOT - 143
|
Vishay Intertechnology, Inc.
|
