| PART |
Description |
Maker |
| EN5810 EN5810A |
Bipolar Transisitor, -50V, -1A, Low VCE(sat) PNP Single CPH6
Bipolar Transisitor -50V, -1A, Low VCE(sat) PNP Single CPH6
|
ON Semiconductor
|
| B37873K5473M60 B37873K5474M62 B37932K5223M60 B3793 |
CAPACITOR 47 NF 50V
CAPACITOR 470 NF 50V
CAPACITOR 22 NF 50V
KONDENSATOR 100NF 50V
CAPACITOR 220 NF 50V
CAPACITOR 1 UF 50V 电容超滤50V
CAPACITOR 1 PF 50V 电容公积0V
|
Motorola Mobility Holdings, Inc.
EPCOS AG
|
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| IRG4BC40F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR（VCES和\u003d 600V电压的Vce（on）典\u003d 1.50V，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| ENA0269 |
Bipolar Transistor, -50V, -2A, Low VCE(sat), PNP Single NMP
|
ON Semiconductor
|
| EN8953A |
Bipolar Transistor (-)50V, (-)1A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
| 2SC5706 2SC5706-E 2SC5706-H 2SC5706-TL-E 2SC5706-T |
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| 2SB1122T-TD-E |
Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| 2SB1122 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| 2SA2210 2SA2210-1E |
Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG
|
ON Semiconductor
|
| 2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一（c）|52AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd.
ROHM
|
