PART |
Description |
Maker |
HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
|
HVC376B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVC374B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVC355B |
Variable Capacitance Diode for VCO
|
LRC[Leshan Radio Company]
|
HVD369B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD359 |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD350B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC369B |
Variable Capacitance Diode for VCO
|
LRC[Leshan Radio Company]
|
HVC355 HVC355B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|