| PART |
Description |
Maker |
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| AP2121 AP2121AK-1.8TRE1 AP2121AK-3.0TRE1 AP2121AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
http://
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
