| PART |
Description |
Maker |
| 2N40L-TA3-T 2N40G-TA3-T |
2 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RM912 |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
CDMA/AMPS 3-4 Volt Power Amplifier (824849 MHz)
|
Conexant Systems, Inc.
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| NTP75N03-06 NTB75N03-06 NTB75N03-06T4 NTP75N03-006 |
Power MOSFET 75 75Power MOSFET 75 75
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封装的功率MOSFET)
Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
|
| QJD0240002 |
Dual Power MOSFET Module (400 Amperes/200 Volts) 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| 2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
|
|
